il74/ ild74/ ilq74 document number 83640 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179015 1 2 3 6 5 4 b c e a c nc 1 2 3 4 8 7 6 5 e c c e a c c a a c c a a c c a e c c e e c c e 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 single channel dual channel quad channel pb p b -free e3 optocoupler, phototransistor output (single, dual, quad channel) features ? il74/ ild74/ ilq74 ttl compatible transfer ratio, 35 % typical coupling capacitance, 0.5 pf single, dual, & quad channel industry standard dip package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1, x001 suffix fimko description the il74/ ild74/ ilq74 is an optically coupled pair with a gaaias infrared le d and a silicon npn pho- totransistor. signal inform ation, including a dc level, can be transmitted by the de vice while maintaining a high degree of electrical isolation between input and output.the il74/ ild74/ ilq74 is especially for driving medium-speed logic, where it may be used to elimi- nate troublesome ground loop and noise problems. also it can be used to replace relays and transformers in many digital interface applications, as well as ana- log applications such as ctr modulation. the ild74 has two isolated channels in a single dip package; the ilq74 has four isolated channels per package. order information for additional information on t he available options refer to option information. part remarks il74 ctr dc 35 %, single channel dip-6 ild74 ctr dc 35 %, dual channel dip-8 ilq74 ctr dc 35 %, quad channel dip-16 IL74-X006 ctr dc 35 %, single channel dip-6 400 mil (option 6) ild74-x006 ctr dc 35 %, dual channel dip-8 400 mil (option 6) ild74-x007 ctr dc 35 %, dual channel smd-8 (option 7) ild74-x009 ctr dc 35 %, dual channel smd-8 (option 9) ilq74-x009 ctr dc 35 %, quad channel smd-16 (option 9)
www.vishay.com 2 document number 83640 rev. 1.4, 26-oct-04 il74/ ild74/ ilq74 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input (each channel) output coupler parameter test condition symbol value unit peak reverse voltage v r 3.0 v forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 55 % 1.33 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 20 v emitter-collector breakdown voltage bv eco 5.0 v collector-base breakdown voltage bv cbo 70 v power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c parameter test condition part symbol value unit isolation test voltage t = 1.0 sec. v iso 5300 v rms isolation resistance v io = 500 v, t a = 25 c r io 10 12 ? v io = 500 v, t a = 100 c r io 10 11 ? total package dissipation il74 p tot 200 mw ild74 p tot 400 mw ilq74 p tot 500 mw derate linearly from 25 c il74 2.7 mw/c ild74 5.33 mw/c ilq74 6.67 mw/c creepage 7.0 mm clearance 7.0 mm storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 sec.
il74/ ild74/ ilq74 document number 83640 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 20 ma v f 1.3 1.5 v reverse current v r = 3.0 v i r 0.1 100 a capacitance v r = 0 v c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma bv ceo 20 50 v collector-emitter leakage current v ce = 5.0 v, i f = 0 i ceo 5.0 500 na collector-emitter capacitance v ce = 0, f = 1.0 mhz c ce 10.0 pf parameter test condition symbol min ty p. max unit saturation voltage collector- emitter i c = 2.0 ma, i f = 16 ma v cesat 0.3 0.5 v resistance, input to output r io 100 g ? capacitance (input-output) c io 0.5 pf parameter test condition symbol min ty p. max unit dc current transfer ratio i f = 16 ma, v ce = 5.0 v ctr dc 12.5 35 %
www.vishay.com 4 document number 83640 rev. 1.4, 26-oct-04 il74/ ild74/ ilq74 vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit switching times r l = 100 ? , v ce = 10 v, i c = 2.0 ma t on , t off 3.0 s figure 1. forward voltage vs. forward current figure 2. normalized non-satura ted and saturated ctr vs. led current iil74_01 if - forward current - ma 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 1.4 vf - forward voltage - v ta = C55c ta = 25c ta = 85c iil74_02 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v figure 3. normalized non-saturated and saturated ctr vs. led current figure 4. normalized non-saturated and saturated ctr vs. led current iil74_03 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f = 10 ma, t a = 25c t a = 50c ctrce(sat) v ce = 0.4 v iil74_04 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr(sat) nctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v t a = 70c nctr - normalized ctr
il74/ ild74/ ilq74 document number 83640 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 5. normalized non-saturated and saturated ctr vs. led current figure 6. collector-emitter cu rrent vs. temperature and led current figure 7. collector-emitter leakage current vs.temp. iil74_05 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sat) nctr normalized to: v ce =10 v,i f = 10 ma, t a = 25c ctrce(sat) v ce = 0.4 v t a = 85c iil74_06 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50c 70c 85c i f - led current - ma i ce - collector current - ma 25c 40 iil74_07 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 t a - ambient temperature - c i ceo - collector-emitter - na vce=10v typical figure 8. normalized ctrcb vs. led current and temp. figure 9. collector base photocurrent vs. led current figure 10. normalized photocurrent vs. i f and temp. iil74_08 .1 1 1 0 100 0.0 0.5 1.0 1.5 25c 50c 70c if - led current - ma nctrcb - normalized ctrcb normalized to: if =10 ma vcb = 9.3 v ta = 25c iil74_09 100 10 1 .1 .01 .1 1 10 100 1000 if - led current - ma icb - collector base photocurrent - a icb = 1.0357 *if ^1.3631 ta = 25c iil74_10 100 10 1 .1 .01 .1 1 10 nib-ta=-20c nib,ta=25c nib,ta=50c nib,ta=70c i f - led current - ma normalized photocurrent normalized to: if=10ma,ta=25c
www.vishay.com 6 document number 83640 rev. 1.4, 26-oct-04 il74/ ild74/ ilq74 vishay semiconductors figure 11. normalized non-saturated hfe vs. base current and temperature figure 12. normalized saturated hfe vs. base current and temperature figure 13. propagation delay vs. collector load resistor iil74_11 1 10 100 1000 0.4 0.6 0.8 1.0 1.2 ib - base current - a nhfe - normalized hfe ib=20 a vce=10v ta = 25c -20c 25c 50c 70c normalized to: iil74_12 0.0 0.5 1.0 1.5 25c - 20c 50c 70c nhfe(sat) - normalized saturated hfe 1 10 100 1000 vce=0.4 v ib - base current - a normalized to: v ce =10v i b =20 a t a = 25c iil74_13 rl - collector load resistor - k ? 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 tplh tphl tplh - propagation delay s tphl - propagation delay s ta = 25c, if = 10 ma vcc=5v,vth=1.5v
il74/ ild74/ ilq74 document number 83640 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in mm package dimensions in inches (mm) 14770 i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a
www.vishay.com 8 document number 83640 rev. 1.4, 26-oct-04 il74/ ild74/ ilq74 vishay semiconductors package dimensions in inches (mm) .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 910111213141516 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
il74/ ild74/ ilq74 document number 83640 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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